Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
JOURNAL OF APPLIED PHYSICS 87:3 (2000) 1566-1568
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Institute of Electrical and Electronics Engineers (IEEE) (1999) 513-515
Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (1999) 348-351
Abstract:
Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analyzed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The inter-subband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps.Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Institute of Electrical and Electronics Engineers (IEEE) (1999) 187-190
Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (1999) 344-347