Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces
Physica E: Low-Dimensional Systems and Nanostructures 13:2-4 (2002) 896-899
Abstract:
We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures. © 2002 Elsevier Science Ltd. All rights reserved.Optimisation of Growth Parameters for Photonic Crystal Structures
Institute of Electrical and Electronics Engineers (IEEE) (2002) 153-154
Enhancement of THz emission from semiconductor devices
COMMAD 2002 PROCEEDINGS (2002) 281-284
Enhancement of terahertz emission from semiconductor surfaces
THZ 2002: IEEE TENTH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS PROCEEDINGS (2002) 48-51
Thermally stimulated luminescence in ion-implanted GaAs
JOURNAL OF LUMINESCENCE 96:2-4 (2002) PII S0022-2313(01)00219-8