Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
Applied Physics A: Materials Science and Processing 69:4 (1999) 467-470
Abstract:
The 3D islands of the Stranski-Krastanow system Ge/Si(001) that form either during the annealing of previously flat and nearly strain-relieved Ge films at 1020 K or directly at the Ge deposition at 1020 K are found to be composed of a mixture of Ge and Si, thus pointing to considerable interdiffusion at 1020 K. Direct measurement of the elastic energy unambiguously reveals that neither the 3D islanding nor the Si in-diffusion are driven by the reduction of misfit strain; this strain being the result of increasing configurational entropy.Spatially resolved measurement of transverse surface acoustic waves for the investigation of elastic properties
Surface and Interface Analysis 27:5 (1999) 558-561
Abstract:
This paper reports new developments in the field of spatially resolved surface acoustic wave (SAW) analysis. With scanning acoustic force microscopy (SAFM) the investigation of SAW phenomena with lateral resolution of the scanning force microscope became possible. This technique was limited to SAW modes with an out-of-plane oscillation component. Recently, we demonstrated that purely in-plane polarized SAWs can also be investigated by using a non-linear coupling to the cantilever's torsional movement. Now it is possible to measure the SAW phase velocity dispersion for any given SAW polarization. We used SAFM for investigation of the layered system SiO2 on ST-cut quartz.Acoustic phase velocity measurements with nanometer resolution by scanning acoustic forcemicroscopy
Applied Physics A: Materials Science and Processing 66:SUPPL. 1 (1998)
Abstract:
With the increasing interest in nanostructures and thin films, the need for a quantitative measuring method for elastic constants on the nanometer scale has become more evident. The fundamental physical quantity characterizing the elastic constants is the acoustic phase velocity. Due to the strong localization of surface acoustic waves (SAWs) in the near-surface region, SAWs are particularly favored for such investigations. The velocity measurement is commonly performed by time delay and acoustic far-field methods. Therefore the lateral resolution of the velocity measurement is restricted by the wavelength involved to some tens of microns. Recently, we introduced the scanning acoustic force microscope (SAFM) for the measurement of SAW amplitude distributions with nanometer lateral resolution. The key to detecting high-frequency surface oscillations by the slowly responding force microscope cantilever is the nonlinear force curve. This nonlinearity can be exploited in a heterodynetype setup for high-frequency wave mixing of a probe and a reference wave, revealing the phase of the probe wave. The difference frequency can be chosen to be as low as 1 kHz. We present measurements of the phase velocity over a lateral distance of 19:9 nm. The phase velocity dispersion due to Au layers on a quartz substrate was measured over distances as small as 200 nm and compared with calculations. © 1998 Springer-Verlag.Forcemicroscopy for the investigation of high-frequency surface acoustic wave devices
Applied Physics A: Materials Science and Processing 66:SUPPL. 1 (1998)
Abstract:
Surface acoustic wave (SAW) devices are of great importance in mobile communication and signal processing applications. For their optimization second-order effects, like diffraction or mass loading, have to be studied. However, meeting today's demands of GHz operation new ways of wave field mapping have to be developed, since common methods, like laser optical or electron microscope probing, are resolution limited to the micron range. Scanning acoustic force microscopy (SAFM) allows the detection of the high-frequency surface oscillations having sub-Å amplitudes with the force microscope's typical lateral resolution. The key for measuring the high mechanical frequencies is the nonlinear force curve. Another approach is the force microscope mapping of rearranged fine particles, revealing the nodes and antinodes of the standing wave field. We present measurements in the near field of, and within, acoustic devices fabricated on piezoelectric substrates, such as LiNbO3 and quartz, and being operated at frequencies around 600MHz. By employing SAFM, the local influence of the electrodes on the wave field, leading to undesired performance losses, was investigated. © 1998 Springer-Verlag.High resolution acoustic field imaging applied to surface acoustic wave devices
Proceedings of the IEEE Ultrasonics Symposium 1 (1998) 265-268