Tunnel barrier fabrication on Si and its impact on a spin transistor
J MAGN MAGN MATER 290 (2005) 1383-1386
Abstract:
The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. © 2004 Elsevier B.V. All rights reserved.Silicon spin diffusion transistor: materials, physics and device characteristics
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 152:4 (2005) 340-354
I-V asymmetry and magnetoresistance in nickel nanoconstrictions
J MAGN MAGN MATER 272-76 (2004) 1571-1572
Abstract:
We present a joint experimental and theoretical study on the transport properties of nickel nanoconstrictions. The samples show highly non-linear and asymmetric I-V characteristics when the conductance is smaller than G(0) = 2e(2)/h, and huge magneto resistance ratios exceeding 99.9%. We model a single point contact in a two-band tight-binding model as a 2 x 2 nickel chain connected to two semi-infinite nickel leads. The magnetoresistance is calculated by using a non-equilibrium Green's function technique. (C) 2003 Published by Elsevier B.V.A novel high gain silicon based spin transistor
Digests of the Intermag Conference (2003)
Abstract:
A novel high gain silicon based spin transistor was presented. The spin transistors were fabricated using standard photolithography on n- and p-type silicon-on-insulator (SOI) wafers. The results showed that connected in common emitter configuration and measured at room temperature, the transistor exhibited similar characteristics to that of a conventional bipolar transistor, except the current gain is negative.High current gain silicon-based spin transistor
Journal of Physics D: Applied Physics 36:2 (2003) 81-87