Neutron irradiation of silicon diodes at temperatures of +20°C and -20°C
Nuclear Inst. and Methods in Physics Research, A 326:1-2 (1993) 365-372
Abstract:
We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5 × 1013 neutron/cm2. The measurements have been made at diode temperatures between room temperature and -20°C. From measurements of the diode leakage current and depletion voltage, and consequent evaluations of the effective impurity concentration, the temperature dependence of these quantities is discussed in terms of the annealing behaviour of the diodes. Comments are made on the suitability of silicon as a detector medium for particle physics experiments at future accelerators. © 1993.A 66 MHz, 32-channel analog memory circuit with data selection for fast silicon detectors
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Elsevier 326:1-2 (1993) 100-111
MEASUREMENT OF THE GLUON STRUCTURE-FUNCTION FROM DIRECT PHOTON DATA AT THE CERN (P)OVER-BAR-P COLLIDER
PHYSICS LETTERS B 299:1-2 (1993) 174-182
A search for charged Higgs from top quark decay at the CERN p̄p collider
Physics Letters B 280:1-2 (1992) 137-145
Abstract:
The process t→H+b, H+→τ+v, τ+→hadrons+v and its charge conjugate are investigated by seeking an excess in number of observed τ's beyond that expected from the standard model under the assumption of e-τ universality. No such excess is found and new regions of the mH-mt plane are excluded for B(H+→τv) = 0.5 and 1.0. In addition, the ratio of couplings of the τ and e to the W is precisely measured as gwτ/gwe = 1.02 ± 0.04(stat.)±0.04(syst.). © 1992.Direct measurement of the W-γ coupling at the CERN pp Collider
Physics Letters B 277:1-2 (1992) 194-202