PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS
PHYSICA B & C 134:1-3 (1985) 318-322
PICOSECOND STUDIES OF LUMINESCENCE IN POLYTHIOPHENE AND POLYDIACETYLENE
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 18:26 (1985) L843-L847
Stimulated Recombination and the Dynamic Mott Transition in GaTe
Springer Nature (1985) 1371-1374
MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.
IEE Colloquium (Digest) (1984)
Abstract:
In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe the energy relaxation of hot carriers in semiconductor structures. In addition, by measuring the variation of luminescence lifetime with carrier density one can obtain information about radiative and nonradiative decay processes. These processes are important in all photonic devices, but especially so in structures where interfaces may have a particularly strong influence.Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
Physical Review Letters 53:19 (1984) 1841-1844