Three-photon excitation of InGaN quantum dots
Physical Review Letters American Physical Society 130:8 (2023) 083602
Abstract:
We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron and hole wavefunctions in semiconductor quantum dots. Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to non-resonant excitation, slow relaxation of charge carriers is avoided which allows us to measure directly the radiative lifetime of the lowest energy exciton states. Since the emission energy is detuned far from the resonant driving laser field, polarization filtering is not required and emission with a greater degree of linear polarization is observed compared to non-resonant excitation.Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact
ACS Nano American Chemical Society 17:4 (2023) 3289-3300
Abstract:
Halide perovskite light-emitting diodes (PeLEDs) exhibit great potential for use in next-generation display technologies. However, scale-up will be challenging due to the requirement of very thin transport layers for high efficiencies, which often present spatial inhomogeneities from improper wetting and drying during solution processing. Here, we show how a thin Al2O3 layer grown by atomic layer deposition can be used to preferentially cover regions of imperfect hole transport layer deposition and form an intermixed composite with the organic transport layer, allowing hole conduction and injection to persist through the organic hole transporter. This has the dual effect of reducing nonradiative recombination at the heterojunction and improving carrier selectivity, which we infer to be due to the inhibition of direct contact between the indium tin oxide and perovskite layers. We observe an immediate improvement in electroluminescent external quantum efficiency in our p-i-n LEDs from an average of 9.8% to 13.5%, with a champion efficiency of 15.0%. The technique uses industrially available equipment and can readily be scaled up to larger areas and incorporated in other applications such as thin-film photovoltaic cells.Optical gain of vertically coupled Cd0.6Zn0.4Te/ZnTe quantum dots
Nanomaterials MDPI 13:4 (2023) 716
Abstract:
The optical modal gain of Cd0.6Zn0.4Te/ZnTe double quantum dots was measured using a variable stripe length method, where large and small quantum dots are separated with a ZnTe layer. With a large (~18 nm) separation layer thickness of ZnTe, two gain spectra were observed, which correspond to the confined exciton levels of the large and small quantum dots, respectively. With a small (~6 nm) separation layer thickness of ZnTe, a merged single gain spectrum was observed. This can be attributed to a coupled state between large and small quantum dots. Because the density of large quantum dots (4 × 1010 cm−2) is twice the density of small quantum dots (2 × 1010 cm−2), the density of the coupled quantum dots is determined by that of small quantum dots. As a result, we found that the peak gain (123.9 ± 9.2 cm−1) with the 6 nm separation layer is comparable to that (125.2 ± 29.2 cm−1) of the small quantum dots with the 18 nm separation layer.Direct current piezoelectric energy harvesting based on plasmon-enhanced solar radiation pressure
Advanced Optical Materials Wiley 11:7 (2023) 2202212
Abstract:
A piezoelectric energy generating device that produces electricity using plasmon-enhanced solar radiation pressure (SRP) is developed. The SRP is greatly enhanced on the operational region of the device with a unique crater-like structure, and direct current is generated successfully on the device. By optimizing the material and thickness of top electrode, a maximum power density of 396 µW cm−2 is obtained. In addition, by using Raman measurements, finite-difference time-domain simulation, and COMSOL Multiphysics analysis, it is confirmed that the SRP is greatly amplified on the operational region with the nanoscale surface roughness due to resonance between the incident light and surface plasmons. By increasing the rotational speed of an optical chopper used to measure the change in the output characteristics of the device, and comparing this with the simulated result, it is found that the constant charge produced by the piezoelectric effect arose due to the superposition of charge phases in the device.Molecular layer-by-layer re-stacking of MoS2–In2Se3 by electrostatic means: assembly of a new layered photocatalyst
Materials Chemistry Frontiers Royal Society of Chemistry 7:5 (2023) 937-945