Transconductor/multiplier circuits for gallium arsenide technology: Part II--Practical circuit design
Proceedings - IEEE International Symposium on Circuits and Systems 5 (1991) 2991-2994
Abstract:
Key circuit techniques are developed for the modification of high frequency, transconductor/multiplier circuit building blocks. A semi-nonlinear analysis technique is developed and a novel technique for cascoding such circuits is presented. The techniques are illustrated by application to a four-quadrant analog multiplier.High Frequency Gallium Arsenide Four-Quadrant Analogue Multiplier
Electronics Letters 26:20 (1990) 1650-1652
Abstract:
A general principle and some basic circuit techniques suitable for the implementation of the four-quadrant analogue multiplier using gallium arsenide depletion-mode MESFET Technology are presented. A version of the circuit achieves a simulated accuracy of the order of 2% and a 3 dB bandwidth of 6.5 GHz using level 1 MESFET models in HSPICE. © 1990, The Institution of Electrical Engineers. All rights reserved.ADAPTING THE CERN PS BOOSTER TO OXYGEN ACCELERATION.
(1987) 526-528