Electronic structures of topological quantum materials studied by ARPES
Chapter in Topological Insulator and Related Topics, Elsevier 108 (2021) 1-42
Surface photovoltaic effect and electronic structure of β-InSe
Physical Review Materials American Physical Society (APS) 4:12 (2020) 124604
Observation of Topological Electronic Structure in Quasi-1D Superconductor TaSe3
Matter Elsevier 3:6 (2020) 2055-2065
Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator.
Science bulletin 65:24 (2020) 2086-2093
Abstract:
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states with a diminishing gap show negligible temperature dependence across the AFM transition. Together with the results of its sister compound MnBi2Te4, we illustrate important aspects of electronic structures and the effect of magnetic ordering in this family of magnetic TQMs.Electronic origin of the enhanced thermoelectric efficiency of Cu2Se.
Science bulletin 65:22 (2020) 1888-1893