Transverse field muon-spin rotation measurement of the topological anomaly in a thin film of MnSi
Physical Review B: Condensed Matter and Materials Physics American Physical Society 93:14 (2016) 140412(R)
Abstract:
We present the results of transverse-field muon-spin rotation measurements on an epitaxially grown 40-nm-thick film of MnSi on Si(111) in the region of the field-temperature phase diagram where a skyrmion phase has been observed in the bulk. We identify changes in the quasistatic magnetic field distribution sampled by the muon, along with evidence for magnetic transitions around T≈40 and 30 K. Our results suggest that the cone phase is not the only magnetic texture realized in film samples for out-of-plane fields.Study of Ho-doped Bi2Te3 topological insulator thin films
Applied Physics Letters American Institute of Physics 107:18 (2015) 182406
Abstract:
Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.Topological computation based on direct magnetic logic communication
Scientific Reports Nature Publishing Group 5 (2015)
Abstract:
Non-uniform magnetic domains with non-trivial topology, such as vortices and skyrmions, are proposed as superior state variables for nonvolatile information storage. So far, the possibility of logic operations using topological objects has not been considered. Here, we demonstrate numerically that the topology of the system plays a significant role for its dynamics, using the example of vortex-antivortex pairs in a planar ferromagnetic film. Utilising the dynamical properties and geometrical confinement, direct logic communication between the topological memory carriers is realised. This way, no additional magnetic-to-electrical conversion is required. More importantly, the information carriers can spontaneously travel up to ~300 nm, for which no spin-polarised current is required. The derived logic scheme enables topological spintronics, which can be integrated into large-scale memory and logic networks capable of complex computations.Study of Dy-doped Bi₂Te₃: thin film growth and magnetic properties.
Journal of physics. Condensed matter : an Institute of Physics journal 27:24 (2015) 245602
Abstract:
Breaking the time-reversal symmetry (TRS) in topological insulators (TIs) through ferromagnetic doping is an essential prerequisite for unlocking novel physical phenomena and exploring potential device applications. Here, we report the successful growth of high-quality (Dy(x)Bi(1-x))2Te3 thin films with Dy concentrations up to x = 0.355 by molecular beam epitaxy. Bulk-sensitive magnetisation studies using superconducting quantum interference device magnetometry find paramagnetic behaviour down to 2 K for the entire doping series. The effective magnetic moment, μeff, is strongly doping concentration-dependent and reduces from ∼12.6 μ(B) Dy(-1) for x = 0.023 to ∼4.3 μ(B) Dy(-1) for x = 0.355. X-ray absorption spectra and x-ray magnetic circular dichroism (XMCD) at the Dy M4,5 edge are employed to provide a deeper insight into the magnetic nature of the Dy(3+)-doped films. XMCD, measured in surface-sensitive total-electron-yield detection, gives μ(eff )= 4.2 μ(B) Dy(-1). The large measured moments make Dy-doped films interesting TI systems in which the TRS may be broken via the proximity effect due to an adjacent ferromagnetic insulator.Universal Magnetic Hall Circuit Based on Paired Spin Heterostructures
Advanced Electronic Materials Wiley 1:6 (2015)