Squeezed state generation in semiconductor waveguides
Electron and Photon Confinement in Semiconductor Nanostructures (2003) 191-214
Ultrafast sampling measurements using the photomodulated kinetic inductance in high-Tc supercondcutors
Applied Physics Letters 82:23 (2003) 4014-4016
Abstract:
Ultrafast sampling measurements using the photomodulated kinetic inductance in high temperature superconductors were presented. It was shown that the relaxation time for excited quasiparticles and the subsequent recondensation into the superfluid state was on the timescale of a few picoseconds or faster. The effects of bias currents on the signal strengths were studied and the time resolution and sensitivity of the technique were evaluated.Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
Physica E: Low-Dimensional Systems and Nanostructures 17:1-4 (2003) 255-257
Abstract:
The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen. © 2002 Elsevier Science B.V. All rights reserved.Time-resolved gain dynamics in InGaN MQWs using a Kerr gate
PHYSICA E 17:1-4 (2003) 255-257
Abstract:
The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen. (C) 2002 Elsevier Science B.V. All rights reserved.Crystal growth and superconductivity of LiTi2O4 and Li1+1/3Ti2−1/3O4
Journal of Crystal Growth Elsevier 250:1-2 (2003) 139-145