The origin of the linear magnetoresistance in a Dirac material

Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical applications. Using ultra-high magnetic fields and a large range of temperatures we find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility. The paper has been published as an Editor's Suggestion in Phys. Rev. Lett. 114, 117201 (2015). Single crystals for this work were grown both in Oxford, Ames Laboratory, USA, and in Dresden, Germany and the high magnetic field experiments were performed both in Oxford and at the European Magnetic Field Laboratory at LMNCI in Toulouse, France.