Publications by Thorsten Hesjedal

X-ray magnetic circular dichroism study of Dy-doped Bi<inf>2</inf>Te<inf>3</inf> topological insulator thin films

Journal of Magnetism and Magnetic Materials 422 (2017) 93-99

AI Figueroa, AA Baker, SE Harrison, K Kummer, G van der Laan, T Hesjedal

© 2016 The AuthorsMagnetic doping of topological insulators (TIs) is crucial for unlocking novel quantum phenomena, paving the way for spintronics applications. Recently, we have shown that doping with rare earth ions introduces large magnetic moments and allows for high doping concentrations without the loss of crystal quality, however no long range magnetic order was observed. In Dy-doped Bi2Te3 we found a band gap opening above a critical doping concentration, despite the paramagnetic bulk behavior. Here, we present a surface-sensitive x-ray magnetic circular dichroism (XMCD) study of an in situ cleaved film in the cleanest possible environment. The Dy M4,5 absorption spectra measured with circularly polarized x-rays are fitted using multiplet calculations to obtain the effective magnetic moment. Arrott–Noakes plots, measured by the Dy M5 XMCD as a function of field at low temperatures, give a negative transition temperature. The evaporation of a ferromagnetic Co thin film did not introduce ferromagnetic ordering of the Dy dopants either; instead a lowering of the transition temperature was observed, pointing towards an antiferromagnetic ordering scenario. This result shows that there is a competition between the magnetic exchange interaction and the Zeeman interaction. The latter favors the Co and Dy magnetic moments to be both aligned along the direction of the applied magnetic field, while the exchange interaction is minimized if the Dy and Co atoms are antiferromagnetically coupled, as in zero applied field.

Topological insulators: Engineered heterostructures.

Nat Mater 16 (2016) 3-4

T Hesjedal, Y Chen

Proposal of a micromagnetic standard problem for ferromagnetic resonance simulations

Journal of Magnetism and Magnetic Materials 421 (2017) 428-439

A Baker, M Beg, G Ashton, M Albert, D Chernyshenko, W Wang, S Zhang, MA Bisotti, M Franchin, CL Hu, R Stamps, T Hesjedal, H Fangohr

© 2016 Elsevier B.V.Nowadays, micromagnetic simulations are a common tool for studying a wide range of different magnetic phenomena, including the ferromagnetic resonance. A technique for evaluating reliability and validity of different micromagnetic simulation tools is the simulation of proposed standard problems. We propose a new standard problem by providing a detailed specification and analysis of a sufficiently simple problem. By analyzing the magnetization dynamics in a thin permalloy square sample, triggered by a well defined excitation, we obtain the ferromagnetic resonance spectrum and identify the resonance modes via Fourier transform. Simulations are performed using both finite difference and finite element numerical methods, with OOMMF and Nmag simulators, respectively. We report the effects of initial conditions and simulation parameters on the character of the observed resonance modes for this standard problem. We provide detailed instructions and code to assist in using the results for evaluation of new simulator tools, and to help with numerical calculation of ferromagnetic resonance spectra and modes in general.

The magneto-Hall difference and the planar extraordinary Hall balance

AIP Advances 6 (2016)

SL Zhang, T Hesjedal

© 2016 Author(s).The extraordinary Hall balance (EHB) is a general device concept that harnesses the net extraordinary Hall effect (EHE) arising from two independent magnetic layers, which are electrically in parallel. Different EHB behavior can be achieved by tuning the strength and type of interlayer coupling, i.e., ferromagnetic or antiferromagnetic of varying strength, allowing for logic and memory applications. The physics of the EHE in such a multilayered systems, especially the interface-induced effect, will be discussed. A discrepancy between the magnetization and the Hall effect, called the magneto-Hall difference (MHD) is found, which is not expected in conventional EHE systems. By taking advantage of the MHD effect, and by optimizing the materials structure, magnetoresistance ratios in excess of 40,000% can be achieved at room-temperature. We present a new design, the planar EHB, which has the potential to achieve significantly larger magnetoresistance ratios.

Step-Flow Growth of Bi<inf>2</inf>Te<inf>3</inf> Nanobelts

Crystal Growth and Design 16 (2016) 6961-6966

P Schönherr, T Tilbury, H Wang, AA Haghighirad, V Srot, PA Van Aken, T Hesjedal

© 2016 American Chemical Society.Understanding the growth mechanism of nanostructures is key to tailoring their properties. Many compounds form nanowires following the vapor-liquid-solid (VLS) growth mechanism, and the growth of Bi2Te3 nanobelts was also explained following the VLS route. Here, we present another growth mechanism of Bi2Te3 nano- and submicron belts and ribbons. The samples were grown by physical vapor transport from Bi2Te3 precursors using TiO2 nanoparticles as a catalyst and analyzed by scanning electron microscopy and scanning transmission electron microscopy. The growth starts from a Te-rich cluster and proceeds via a thin, tip-catalyzed primary layer growing in the [110] direction. The primary layer serves as a support for subsequent step-flow growth. The precursor predominantly absorbs on the substrate and reaches the belt by migration from the base to the tip. Terrace edges pose energy barriers that enhance the growth rate of secondary layers compared to the primary layer. Broadening of the sidewalls is commonly observed and leads to triangular voids that can even result in a branching of the growing belts. Step-flow growth of Bi2Te3 submicron belts is different from the spiral-like growth mode of Bi2Te3 thin films and an important step toward the growth of layered topological insulator nanostructures.

Multidomain Skyrmion Lattice State in Cu2OSeO3.

Nano letters 16 (2016) 3285-3291

SL Zhang, A Bauer, DM Burn, P Milde, E Neuber, LM Eng, H Berger, C Pfleiderer, G van der Laan, T Hesjedal

Magnetic skyrmions in chiral magnets are nanoscale, topologically protected magnetization swirls that are promising candidates for spintronics memory carriers. Therefore, observing and manipulating the skyrmion state on the surface level of the materials are of great importance for future applications. Here, we report a controlled way of creating a multidomain skyrmion state near the surface of a Cu2OSeO3 single crystal, observed by soft resonant elastic X-ray scattering. This technique is an ideal tool to probe the magnetic order at the L3 edge of 3d metal compounds giving an average depth sensitivity of ∼50 nm. The single-domain 6-fold-symmetric skyrmion lattice can be broken up into domains, overcoming the propagation directions imposed by the cubic anisotropy by applying the magnetic field in directions deviating from the major cubic axes. Our findings open the door to a new way to manipulate and engineer the skyrmion state locally on the surface or on the level of individual skyrmions, which will enable applications in the future.

Resonant elastic x-ray scattering from the skyrmion lattice in Cu2OSeO3

Physical Review B - Condensed Matter and Materials Physics 93 (2016)

SL Zhang, A Bauer, H Berger, C Pfleiderer, G Van Der Laan, T Hesjedal

© 2016 American Physical Society.We report the study of the skyrmion state near the surface of Cu2OSeO3 using soft resonant elastic x-ray scattering (REXS) at the Cu L3 edge. Within the lateral sampling area of 200×200μm2, we found a long-range-ordered skyrmion lattice phase as well as the formation of skyrmion domains via the multiple splitting of the diffraction spots. In a recent REXS study of the skyrmion phase of Cu2OSeO3 [M. C. Langner, S. Roy, S. Mishra, J. Lee, X. Shi, M. Hossain, Y.-D. Chuang, S. Seki, Y. Tokura, S. Kevan, and R. Schoenlein, Phys. Rev. Lett. 112, 167202 (2014)PRLTAO0031-900710.1103/PhysRevLett.112.167202], the authors reported the observation of the unexpected existence of two distinct skyrmion sublattices that arise from inequivalent Cu sites, and that the rotation and superposition of the two periodic structures lead to a moiré pattern. However, we find no energy splitting of the Cu peak in x-ray-absorption measurements and, instead, discuss alternative origins of the peak splitting. In particular, we find that for magnetic field directions deviating from the major cubic axes a multidomain skyrmion lattice state is obtained, which consistently explains the splitting of the magnetic spots into two - and more - peaks.

On the temperature dependence of spin pumping in ferromagnet-topological insulator-ferromagnet spin valves

Results in Physics 6 (2016) 293-294

AA Baker, AI Figueroa, G van der Laan, T Hesjedal

© 2016 The Authors.Topological insulators (TIs) have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet-TI-ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature.

Experimental and density functional study of Mn doped Bi<inf>2</inf>Te<inf>3</inf> topological insulator

APL Materials 4 (2016)

A Ghasemi, D Kepaptsoglou, AI Figueroa, GA Naydenov, PJ Hasnip, MIJ Probert, Q Ramasse, G Van der Laan, T Hesjedal, VK Lazarov

© 2016 Author(s).We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

Transverse field muon-spin rotation measurement of the topological anomaly in a thin film of MnSi

Physical Review B: Condensed Matter and Materials Physics American Physical Society 93 (2016) 140412(R)

T Lancaster, F Xiao, Z Salman, IO Thomas, SJ Blundell, F Pratt, SJ Clark, T Prokscha, A Suter, SL Zhang, AA Baker, T Hesjedal

Transverse field muon-spin rotation measurement of the topological anomaly in a thin film of MnSi

Physical Review B - Condensed Matter and Materials Physics 93 (2016)

T Lancaster, F Xiao, Z Salman, IO Thomas, SJ Blundell, FL Pratt, SJ Clark, T Prokscha, A Suter, SL Zhang, AA Baker, T Hesjedal

© 2016 American Physical Society.We present the results of transverse-field muon-spin rotation measurements on an epitaxially grown 40-nm-thick film of MnSi on Si(111) in the region of the field-temperature phase diagram where a skyrmion phase has been observed in the bulk. We identify changes in the quasistatic magnetic field distribution sampled by the muon, along with evidence for magnetic transitions around T≈40 and 30 K. Our results suggest that the cone phase is not the only magnetic texture realized in film samples for out-of-plane fields.

Organic Transistors: Universal Magnetic Hall Circuit Based on Paired Spin Heterostructures (Adv. Electron. Mater. 6/2015)

Advanced Electronic Materials 1 (2016)

S Zhang, AA Baker, JY Zhang, G Yu, S Wang, T Hesjedal

One-Step SnO2 Nanotree Growth.

Chemistry (Weinheim an der Bergstrasse, Germany) (2016)

P Schönherr, T Hesjedal

A comparison between Au, TiO2 and self-catalysed growth of SnO2 nanostructures using chemical vapour deposition is reported. TiO2 enables growth of a nanonetwork of SnO2 , whereas self-catalysed growth results in nanoclusters. Using Au catalyst, single-crystalline SnO2 nanowire trees can be grown in a one-step process. Two types of trees are identified that differ in size, presence of a catalytic tip, and degree of branching. The growth mechanism of these nanotrees is based on branch-splitting and self-seeding by the catalytic tip, facilitating at least three levels of branching, namely trunk, branch and leaf.

Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure

Physical Review B - Condensed Matter and Materials Physics 94 (2016)

AI Figueroa, SL Zhang, AA Baker, R Chalasani, A Kohn, SC Speller, D Gianolio, C Pfleiderer, G Van Der Laan, T Hesjedal

© 2016 authors. Published by the American Physical Society.We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500 Å) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature Tc assumes a thickness-independent enhanced value of ≥43 K as compared with that of bulk MnSi, where Tc≈29K. A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111] direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi - except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.

Free-standing millimetre-long Bi2Te3 sub-micron belts catalyzed by TiO2 nanoparticles.

Nanoscale research letters 11 (2016) 308-

P Schönherr, F Zhang, D Kojda, R Mitdank, M Albrecht, SF Fischer, T Hesjedal

Physical vapour deposition (PVD) is used to grow millimetre-long Bi2Te3 sub-micron belts catalysed by TiO2 nanoparticles. The catalytic efficiency of TiO2 nanoparticles for the nanostructure growth is compared with the catalyst-free growth employing scanning electron microscopy. The catalyst-coated and catalyst-free substrates are arranged side-by-side, and overgrown at the same time, to assure identical growth conditions in the PVD furnace. It is found that the catalyst enhances the yield of the belts. Very long belts were achieved with a growth rate of 28 nm/min. A ∼1-mm-long belt with a rectangular cross section was obtained after 8 h of growth. The thickness and width were determined by atomic force microscopy, and their ratio is ∼1:10. The chemical composition was determined to be stoichiometric Bi2Te3 using energy-dispersive X-ray spectroscopy. Temperature-dependent conductivity measurements show a characteristic increase of the conductivity at low temperatures. The room temperature conductivity of 0.20 × 10(5) S m (-1) indicates an excellent sample quality.

Imaging and manipulation of skyrmion lattice domains in Cu<inf>2</inf>OSeO<inf>3</inf>

Applied Physics Letters 109 (2016)

SL Zhang, A Bauer, H Berger, C Pfleiderer, G Van der Laan, T Hesjedal

© 2016 Author(s).Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in high-density, low-energy nonvolatile memory. Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which makes it difficult to write information unless they are spatially broken up into smaller units, each representing a bit. Thus, the formation and manipulation of skyrmion lattice domains is a prerequisite for memory applications. Here, using an imaging technique based on resonant magnetic x-ray diffraction, we demonstrate the mapping and manipulation of skyrmion lattice domains in Cu2OSeO3. The material is particularly interesting for applications owing to its insulating nature, allowing for electric field-driven domain manipulation.

Magnetic ordering in Ho-doped Bi<inf>2</inf>Te<inf>3</inf> topological insulator

Physica Status Solidi - Rapid Research Letters 10 (2016) 467-470

AI Figueroa, SE Harrison, LJ Collins-McIntyre, G van der Laan, T Hesjedal

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimWe investigate the magnetic properties of Ho-doped Bi2Te3 thin films grown by molecular beam epitaxy. Analysis of the polarized X-ray absorption spectra at the Ho M5 absorption edge gives an effective 4f magnetic moment which is ∼45% of the Hund's rule ground state value. X-ray magnetic circular dichroism (XMCD) shows no significant anisotropy, which suggests that the reduced spin moment is not due to the crystal field effects, but rather the presence of non-magnetic or antiferromagnetic Ho sites. Extrapolating the temperature dependence of the XMCD measured in total electron yield and fluorescence yield mode in a field of 7 T gives a Curie–Weiss temperature of ϑCW ≈ –30 K, which suggests antiferromagnetic ordering, in contrast to the paramagnetic behavior observed with SQUID magnetometry. From the anomaly of the XMCD signal at low temperatures, a Néel temperature TN between 10 K and 25 K is estimated. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim).

Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance


AI Figueroa, AA Baker, LJ Collins-McIntyre, T Hesjedal, G van der Laan

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films.

Scientific reports 6 (2016) 26549-

A Ghasemi, D Kepaptsoglou, LJ Collins-McIntyre, Q Ramasse, T Hesjedal, VK Lazarov

We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.

High Resolution STEM Study of Dy-doped Bi2Te3 Thin Films

Microscopy and Microanalysis Cambridge University Press (CUP): STM Journals - No Cambridge Open (2016)

V Srot, P Schoenherr, B Bussmann, SE Harrison, P van Aken, T Hesjedal