Publications by Thorsten Hesjedal
New J. Phys. 17 (2015) 013019
Exchange-coupled hard and soft magnetic layers find extensive use in data storage applications, for which their dynamical response has great importance. With bulk techniques, such as ferromagnetic resonance (FMR), it is difficult to access the behaviour and precise influence of each individual layer. By contrast, the synchrotron radiation-based technique of x-ray detected ferromagnetic resonance (XFMR) allows element-specific and phase-resolved FMR measurements in the frequency range 0.5–11 GHz. Here, we report the study of the magnetization dynamics of an exchange-coupled Ni0.81Fe0.19 (43.5 nm)/Co0.5Fe0.5 (30 nm) bilayer system using magnetometry and vector network analyser FMR, combined with XFMR at the Ni and Co L2 x-ray absorption edges. The epitaxially grown bilayer exhibits two principal resonances denoted as the acoustic and optical modes. FMR experiments show that the Kittel curves of the two layers cannot be taken in isolation, but that their modelling needs to account for an interlayer exchange coupling. The angular dependence of FMR indicates a collective effect for the modes of the magnetically hard CoFe and soft NiFe layer. The XFMR precessional scans show that the acoustic mode is dominated by the Ni signal with the Co and Ni magnetization precessing in phase, whereas the optical mode is dominated by the Co signal with the Co and Ni magnetization precessing in anti-phase. The response of the Co signal at the Ni resonance, and vice versa, show induced changes in both amplitude and phase, which can be ascribed to the interface exchange coupling. An interesting aspect of phase-resolved XFMR is the ability to distinguish between static and dynamic exchange coupling. The element-specific precessional scans of the NiFe/CoFe bilayer clearly have the signature of static exchange coupling, in which the effective field in one layer is aligned along the magnetization direction of the other layer.
Sci Rep 5 (2015) 7907-
Topological insulators (TIs) are enticing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. However, a means to interact with and exploit the topological surface state remains elusive. Here, we report a study of spin pumping at the TI-ferromagnet interface, investigating spin transfer dynamics in a spin-valve like structure using element specific time-resolved x-ray magnetic circular dichroism, and ferromagnetic resonance. Gilbert damping increases approximately linearly with increasing TI thickness, indicating efficient behaviour as a spin sink. However, layer-resolved measurements suggest that a dynamic coupling is limited. These results shed new light on the spin dynamics of this novel material class, and suggest great potential for TIs in spintronic devices, through their novel magnetodynamics that persist even up to room temperature.
Applied Physics Letters American Institute of Physics 106 (2015) 013115
Cadmium arsenide (Cd3As2) is a material well-known for its very high room-temperature carrier mobility. Recently, it has also been shown to be a three-dimensional Dirac semimetal—the three-dimensional analogue of graphene. Here, we present a detailed structural study of the self-catalyzed growth of Cd3As2 nanowires. The crystal structure is confirmed using X-ray diffraction and transmission electron microscopy. Scanning electron microscopy and energy-dispersive X-ray spectroscopy are used to gain insight into the vapor-solid growth mechanism. The role of group II and V elements is reversed in contrast to III-V and other II-V systems, and the tips are found to be As-rich.
Scientific reports 4 (2014) 6109-
Stacking nonvolatile memory cells into a three-dimensional matrix represents a powerful solution for the future of magnetic memory. However, it is technologically challenging to access the data in the storage medium if large numbers of bits are stacked on top of each other. Here we introduce a new type of multilevel, nonvolatile magnetic memory concept, the magnetic abacus. Instead of storing information in individual magnetic layers, thereby having to read out each magnetic layer separately, the magnetic abacus adopts a new encoding scheme. It is inspired by the idea of second quantisation, dealing with the memory state of the entire stack simultaneously. Direct read operations are implemented by measuring the artificially engineered 'quantised' Hall voltage, each representing a count of the spin-up and spin-down layers in the stack. This new memory system further allows for both flexible scaling of the system and fast communication among cells. The magnetic abacus provides a promising approach for future nonvolatile 3D magnetic random access memory.
APPLIED PHYSICS LETTERS 104 (2014) ARTN 253103
Scientific reports 4 (2014) 7277-
Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.
Nanoscale research letters 9 (2014) 127-
: High-density growth of single-crystalline Bi2Se2Te nanowires was achieved via the vapour-liquid-solid process. The stoichiometry of samples grown at various substrate temperatures is precisely determined based on energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy on individual nanowires. We discuss the growth mechanism and present insights into the catalyst-precursor interaction.
APPLIED PHYSICS LETTERS 105 (2014) ARTN 153114
Physica Status Solidi - Rapid Research Letters Wiley-VCH Verlag (2014)
A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 66 (2014) ARTN 10401
APPLIED PHYSICS LETTERS 105 (2014) ARTN 241605
Modelling ferromagnetic resonance in magnetic multilayers: Exchange coupling and demagnetisation-driven effects
JOURNAL OF APPLIED PHYSICS 115 (2014) ARTN 17D140
APPLIED PHYSICS LETTERS 105 (2014) ARTN 121608
Journal of Applied Physics 115 (2014) 2
PHYSICAL REVIEW B 90 (2014) ARTN 134402
We present the results of transverse field (TF) muon-spin rotation (muSR) measurements on Cu2OSeO3, which has a skyrmion lattice phase. We are able to identify that phase via its characteristic TF muSR signal and distinguish it from the other magnetic phases of the material. Dipole field simulations support our interpretation and reveal TF muSR, which shows the skyrmion lattice to be static on the muon timescale, to be a promising tool for the investigation of skyrmion materials and the determination of their phase diagrams.
AIP Advances 4 (2014) 127136
We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ B/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ B/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L 2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.
Applied Physics Letters 102 (2013) 062403
Perpendicular magnetic tunnel junctions (p-MTJs) with MgO barriers are interesting for high-density information-storage devices. Chemically ordered L10-FePt is a potential electrode due to its large perpendicular magnetocrystalline anisotropy. To-date, a single theoretical study on L10-FePt/MgO p-MTJ based on an idealized structure reported significant dependence of spin-dependent tunneling on interface structure. [Y. Taniguchi et al., IEEE Trans. Magn. 44, 2585 (2008).] We report a structural study of epitaxial L10-FePt(001)//MgO(001)//L10-FePt(001) p-MTJs, focusing on the interfaces using aberration-corrected scanning transmission electron microscopy. Interfaces are semi-coherent, with oxygen atomic-columns of MgO located opposite to iron atomic-columns in L10-FePt. Up to three lattice planes show atomic-column steps, the origin of which is attributed to antiphase boundaries in L10-FePt.
New Journal of Physics 15 (2013) 10
Breaking the time reversal symmetry of a topological insulator, for example by the presence of magnetic ions, is a prerequisite for spin-based electronic applications in the future. In this regard Mn-doped Bi 2 Te 3 is a prototypical example that merits a systematic investigation of its magnetic properties. Unfortunately, Mn doping is challenging in many host materials—resulting in structural or chemical inhomogeneities affecting the magnetic properties. Here, we present a systematic study of the structural, magnetic and magnetotransport properties of Mn-doped Bi 2 Te 3 single crystals using complimentary experimental techniques. These materials exhibit a ferromagnetic phase that is very sensitive to the structural details, with T C varying between 9 and 13 K (bulk values) and a saturation moment that reaches4.4(5) μ B per Mn in the ordered phase. Muon spin rotation suggests that the magnetism is homogeneous throughout the sample. Furthermore, torque measurements in fields up to 33 T reveal an easy axis magnetic anisotropy perpendicular to the ab -plane. The electrical transport data show an anomaly around T C that is easily suppressed by an applied magnetic field, and also anisotropic behavior due to the spin-dependent scattering in relation to the alignment of the Mn magnetic moment. Hall measurements on different crystals established that these systems are n -doped with carrier concentrations of ∼ 0.5–3.0 × 10 20 cm −3 . X-ray magnetic circular dichroism (XMCD) at the Mn L 2,3 edge at 1.8 K reveals a large spin magnetic moment of4.3(3) μ B /Mn, and a small orbital magnetic moment of0.18(2) μ B /Mn. The results also indicate a ground state of mixed d 4 –d 5 –d 6 character of a localized electronic nature, similar to the diluted ferromagnetic semiconductor Ga 1− x Mn x As. XMCD measurements in a field of 6 T give a transition point at T ≈ 16 K, which is ascribed to short range magnetic order induced by the magnetic field. In the ferromagnetic state the easy direction of magnetization is along the c -axis, in agreement with bulk magnetization measurements. This could lead to gap opening at the Dirac point, providing a means to control the surface electric transport, which is of great importance for applications.