Publications associated with Semiconductor nanostructures


Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene.

Journal of physics. Condensed matter : an Institute of Physics journal 27 (2015) 164202-

J Huang, JA Alexander-Webber, TJBM Janssen, A Tzalenchuk, T Yager, S Lara-Avila, S Kubatkin, RL Myers-Ward, VD Wheeler, DK Gaskill, RJ Nicholas

Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of T(4) at carrier temperatures from 1.4 K up to ∼100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence n(e)(-1.5) in the scaling of the T(4) power law is observed in bilayer graphene, in contrast to the n(e)(-0.5) dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.


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