Publications associated with Semiconductor nanostructures


Breakdown of the quantum Hall effect in epitaxial graphene

CPEM Digest (Conference on Precision Electromagnetic Measurements) (2014) 40-41

TJBM Janssen, S Rozhko, A Tzalenchuk, JA Alexander-Webber, RJ Nicholas

© 2014 IEEE. We present the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic field. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. We use this knowledge to explore the potential of using graphene as a high temperature (> 2 K) and low magnetic field (< 5 T) quantum resistance standard.


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