Publications associated with Oxide Electronics

Controlling spin current polarization through non-collinear antiferromagnetism.

Nature communications 11 (2020) 4671-

T Nan, CX Quintela, J Irwin, G Gurung, DF Shao, J Gibbons, N Campbell, K Song, S-Y Choi, L Guo, RD Johnson, P Manuel, RV Chopdekar, I Hallsteinsen, T Tybell, PJ Ryan, J-W Kim, Y Choi, PG Radaelli, DC Ralph, EY Tsymbal, MS Rzchowski, CB Eom

The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn<sub>3</sub>GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn<sub>3</sub>GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.

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