Publications associated with LSST


Charge collection in irradiated HV-CMOS detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Elsevier 924 (2018) 214-218

B Hiti, A Affolder, K Arndt, R Bates, M Benoit, F Di Bello, A Blue, D Bortoletto, M Buckland, C Buttar, P Caragiulo, D Das, D Doering, J Dopke, A Dragone, F Ehrler, V Fadeyev, W Fedorko, Z Galloway, C Gay, H Grabas, IM Gregor, P Grenier, A Grillo, Y Han

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.


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