Multimode microscopy of GaN-based semiconductor nanostructures using scanning electron beam techniques

Prof Robert Martin - Department of Physics, SUPA, University of Strathclyde, Glasgow

The group III-nitride semiconductors are used in a growing range of applications, including visible and UV LEDs and lasers, transistors for use at high-power and high-temperature, single photon sources, solar-blind photodetectors and solar fuel devices. The key to high performance of these devices often lies in nanostructuring, either carefully fabricated or naturally occurring. This talk will review the use of correlated, multimode measurements in scanning electron microscopes and electron probe microanalysers to investigate these materials and their nanostructures. Analysis of the optical, electrical and physical properties with nanoscale spatial resolution informs the understanding and improvement of the devices. Combinations of cathodoluminescence (CL), X-ray microanalysis (WDX, EDX), electron beam induced current (EBIC), electron back-scattered diffraction (EBSD) and electron channeling contrast imaging (ECCI) will be described. These provide structural information at sub-micron resolution, optical information down to length scales of 10s of nm and at emission wavelengths down to 200 nm. Results will be presented from a range of nanostructured UV and visible light-emitting structures built from AlGaN, InGaN and other III-N materials.

False-colour cathodoluminescence map superimposed on the image of an InGaN/GaN core/shell nanorod array fabricated at Bath University

Host: Prof Robert Taylor

Audrey Wood Seminar Room, Clarendon Laboratory

02.03.17 Robert Martin.pdf193.62 KB