Advanced Sensor Development

An important focus of our activities is the development of sensors based on CMOS technology which are likely to play a revolutionary role in future detectors. Existing trackers and vertex detectors are based on planar sensors with separate read-out ASICs. CMOS sensors, fabricated using commercial processes, open up the possibility of incorporating read-out electronics into the sensing element. The adoption of the CMOS technology could lead to many advantages compared with the standard planar technology. Possible benefits are reduction of material, improved resolution, and reduced cost. ATLAS is investigating the use of CMOS sensors both for the Phase-II Strip and Pixel Tracker Upgrade. For the strips, a three-year programme with well-defined milestones and break-points started in June 2014. An ATLAS CMOS demonstrator program for the pixel system is also ongoing. Oxford is participating in the activities of both of these groups.

The Oxford Physics Microstructure Detector facility (OPMD) is equipped with state-of-the-art instrumentation evaluate sensors in the laboratory before and after irradiation. Methodologies include: DC measurements to determine depletion voltage, leakage current, and breakdown voltage; edge-TCT to study the distribution of the electric field or the carriers drift velocities; qualification of hybridized detectors in terms of noise; charge collection studies with radioactive sources and lasers.

TCT Laser System

Smart Scope

Contact

Daniela Bortoletto
Ian Shipsey