Publications by Todd Huffman


Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Journal of Instrumentation IOP Publishing 12 (2017) P02010-

K Kanisauskas, A Affolder, K Arndt, R Bates, M Benoit, FD Bello, A Blue, D Bortoletto, M Buckland, C Buttar, P Caragiulo, D Das, J Dopke, A Dragone, V Fadeyev, F Ehrler, Z Galloway, H Grabas, IM Gregor, P Grenier, A Grillo, B Hiti, M Hoeferkamp, LBA Hommels, BT Huffman

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.


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