Publications by John Gregg

A novel high gain silicon based spin transistor

Digests of the Intermag Conference (2003)

A novel high gain silicon based spin transistor was presented. The spin transistors were fabricated using standard photolithography on n- and p-type silicon-on-insulator (SOI) wafers. The results showed that connected in common emitter configuration and measured at room temperature, the transistor exhibited similar characteristics to that of a conventional bipolar transistor, except the current gain is negative.