Publications by John Gregg

Tunnel barrier fabrication on Si and its impact on a spin transistor

J MAGN MAGN MATER 290 (2005) 1383-1386

CL Dennis, CV Tiusan, RA Ferreira, JF Gregg, GJ Ensell, SM Thompson, PP Freitas

The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. © 2004 Elsevier B.V. All rights reserved.

Show full publication list