Publications by Yulin Chen


Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS

CHINESE PHYSICS B 27 (2018) ARTN 017105

G-H Hong, C-W Wang, J Jiang, C Chen, S-T Cui, H-F Yang, A-J Liang, S Liu, Y-Y Lv, J Zhou, Y-B Chen, S-H Yao, M-H Lu, Y-F Chen, M-X Wang, L-X Yang, Z-K Liu, Y-L Chen


Observation of topological surface states and strong electron/hole imbalance in extreme magnetoresistance compound LaBi

PHYSICAL REVIEW MATERIALS 2 (2018) ARTN 024201

J Jiang, NBM Schroter, S-C Wu, N Kumar, C Shekhar, H Peng, X Xu, C Chen, HF Yang, C-C Hwang, S-K Mo, C Felser, BH Yan, ZK Liu, LX Yang, YL Chen


Author Correction: How to probe the spin contribution to momentum relaxation in topological insulators.

Nature communications 9 (2018) 729-

M-S Nam, BH Williams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan

The original version of this Article contained an error in the spelling of the author Benjamin H. Williams, which was incorrectly given as Benjamin H. Willams. This has now been corrected in both the PDF and HTML versions of the Article.


How to probe the spin contribution to momentum relaxation in topological insulators (vol 8, 2017)

NATURE COMMUNICATIONS 9 (2018) ARTN 729

M-S Nam, BH Willams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan


Author Correction: How to probe the spin contribution to momentum relaxation in topological insulators.

Nat Commun 9 (2018) 729-

M-S Nam, BH Williams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan

The original version of this Article contained an error in the spelling of the author Benjamin H. Williams, which was incorrectly given as Benjamin H. Willams. This has now been corrected in both the PDF and HTML versions of the Article.


Surface Structure and Reconstructions of HgTe (111) Surfaces

CHINESE PHYSICS LETTERS 35 (2018) ARTN 026802

X-Y Yang, G-Y Wang, C-X Zhao, Z Zhu, L Dong, A-M Li, Y-Y Lv, S-H Yao, Y-B Chen, D-D Guan, Y-Y Li, H Zheng, D Qian, C Liu, Y-L Chen, J-F Jia


How to probe the spin contribution to momentum relaxation in topological insulators.

Nature communications 9 (2018) 56-

M-S Nam, BH Williams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan

Topological insulators exhibit a metallic surface state in which the directions of the carriers' momentum and spin are locked together. This characteristic property, which lies at the heart of proposed applications of topological insulators, protects carriers in the surface state from back-scattering unless the scattering centres are time-reversal symmetry breaking (i.e. magnetic). Here, we introduce a method of probing the effect of magnetic scattering by decorating the surface of topological insulators with molecules, whose magnetic degrees of freedom can be engineered independently of their electrostatic structure. We show that this approach allows us to separate the effects of magnetic and non-magnetic scattering in the perturbative limit. We thereby confirm that the low-temperature conductivity of SmB6 is dominated by a surface state and that the momentum of quasiparticles in this state is particularly sensitive to magnetic scatterers, as expected in a topological insulator.


Folded superstructure and degeneracy-enhanced band gap in the weak-coupling charge density wave system 2H-TaSe2

PHYSICAL REVIEW B 97 (2018) ARTN 115118

YW Li, J Jiang, HF Yang, D Prabhakaran, ZK Liu, LX Yang, YL Chen


Topological surface state of α-Sn on InSb(001) as studied by photoemission

Physical review B: Condensed matter and materials physics American Physical Society 97 (2018) 075101

MR Scholz, L Dudy, F Reis, F Adler, J Aulbach, LJ Collins-McIntyre, LB Duffy, HF Yang, YL Chen, T Hesjedal, ZK Liu, M Hoesch, S Muff, JH Dil, J Schaefer, R Claessen


Observation of the topological surface state in the nonsymmorphic topological insulator KHgSb

PHYSICAL REVIEW B 96 (2017) ARTN 165143

AJ Liang, J Jiang, MX Wang, Y Sun, N Kumar, C Shekhar, C Chen, H Peng, CW Wang, X Xu, HF Yang, ST Cui, GH Hong, Y-Y Xia, S-K Mo, Q Gao, XJ Zhou, LX Yang, C Felser, BH Yan, ZK Liu, YL Chen


Photoemission study of the electronic structure of valence band convergent SnSe

PHYSICAL REVIEW B 96 (2017) ARTN 165118

CW Wang, YYY Xia, Z Tian, J Jiang, BH Li, ST Cui, HF Yang, AJ Liang, XY Zhan, GH Hong, S Liu, C Chen, MX Wang, LX Yang, Z Liu, QX Mi, G Li, JM Xue, ZK Liu, YL Chen


Spectroscopic evidence for the gapless electronic structure in bulk ZrTe5

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 219 (2017) 45-52

L Shen, MX Wang, SC Sun, J Jiang, X Xu, T Zhang, QH Zhang, YY Lv, SH Yao, YB Chen, MH Lu, YF Chen, C Felser, BH Yan, ZK Liu, LX Yang, YL Chen


Lifshitz Transitions Induced by Temperature and Surface Doping in Type-II Weyl Semimetal Candidate T-d-WTe2

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 11 (2017) ARTN 1700209

Q Zhang, Z Liu, Y Sun, H Yang, J Jiang, S-K Mo, Z Hussain, X Qian, L Fu, S Yao, M Lu, C Felser, B Yan, Y Chen, L Yang


ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 219 (2017) 35-40

Y Zhang, Z Liu, B Zhou, Y Kim, L Yang, H Ryu, C Hwang, Y Chen, Z Hussain, Z-X Shen, S-K Mo


Quantum spin Hall state in monolayer 1T '-WTe2

NATURE PHYSICS 13 (2017) 683-+

S Tang, C Zhang, D Wong, Z Pedramrazi, H-Z Tsai, C Jia, B Moritz, M Claassen, H Ryu, S Kahn, J Jiang, H Yan, M Hashimoto, D Lu, RG Moore, C-C Hwang, C Hwang, Z Hussain, Y Chen, MM Ugeda, Z Liu, X Xie, TP Devereaux, MF Crommie, S-K Mo, Z-X Shen


Topological origin of the type-II Dirac fermions in PtSe2

PHYSICAL REVIEW MATERIALS 1 (2017) ARTN 074202

Y Li, Y Xia, SA Ekahana, N Kumar, J Jiang, L Yang, C Chen, C Liu, B Yan, C Felser, G Li, Z Liu, Y Chen


Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Advanced materials (Deerfield Beach, Fla.) 29 (2017)

H Peng, NBM Schröter, J Yin, H Wang, T-F Chung, H Yang, S Ekahana, Z Liu, J Jiang, L Yang, T Zhang, C Chen, H Ni, A Barinov, YP Chen, Z Liu, H Peng, Y Chen

Graphene has demonstrated great potential in new-generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5° to 31°) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.


Observation of nodal line in non-symmorphic topological semimetal InBi

NEW JOURNAL OF PHYSICS 19 (2017) ARTN 065007

SA Ekahana, S-C Wu, J Jiang, K Okawa, D Prabhakaran, C-C Hwang, S-K Mo, T Sasagawa, C Felser, B Yan, Z Liu, Y Chen


Nontrivial Berry phase and type-II Dirac transport in the layered material PdTe2

PHYSICAL REVIEW B 96 (2017) ARTN 041201

F Fei, X Bo, R Wang, B Wu, J Jiang, D Fu, M Gao, H Zheng, Y Chen, X Wang, H Bu, F Song, X Wan, B Wang, G Wang


Emergence of Dirac-like bands in the monolayer limit of epitaxial Ge films on Au(111)

2D MATERIALS 4 (2017) ARTN 031005

NBM Schroter, MD Watson, LB Duffy, M Hoesch, Y Chen, T Hesjedal, TK Kim

Pages