Publications by Yulin Chen


Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS

CHINESE PHYSICS B 27 (2018) ARTN 017105

G-H Hong, C-W Wang, J Jiang, C Chen, S-T Cui, H-F Yang, A-J Liang, S Liu, Y-Y Lv, J Zhou, Y-B Chen, S-H Yao, M-H Lu, Y-F Chen, M-X Wang, L-X Yang, Z-K Liu, Y-L Chen


Observation of topological surface states and strong electron/hole imbalance in extreme magnetoresistance compound LaBi

PHYSICAL REVIEW MATERIALS 2 (2018) ARTN 024201

J Jiang, NBM Schroter, S-C Wu, N Kumar, C Shekhar, H Peng, X Xu, C Chen, HF Yang, C-C Hwang, S-K Mo, C Felser, BH Yan, ZK Liu, LX Yang, YL Chen


Author Correction: How to probe the spin contribution to momentum relaxation in topological insulators.

Nature communications 9 (2018) 729-

M-S Nam, BH Williams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan

The original version of this Article contained an error in the spelling of the author Benjamin H. Williams, which was incorrectly given as Benjamin H. Willams. This has now been corrected in both the PDF and HTML versions of the Article.


How to probe the spin contribution to momentum relaxation in topological insulators (vol 8, 2017)

NATURE COMMUNICATIONS 9 (2018) ARTN 729

M-S Nam, BH Willams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan


Author Correction: How to probe the spin contribution to momentum relaxation in topological insulators.

Nat Commun 9 (2018) 729-

M-S Nam, BH Williams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan

The original version of this Article contained an error in the spelling of the author Benjamin H. Williams, which was incorrectly given as Benjamin H. Willams. This has now been corrected in both the PDF and HTML versions of the Article.


Surface Structure and Reconstructions of HgTe (111) Surfaces

CHINESE PHYSICS LETTERS 35 (2018) ARTN 026802

X-Y Yang, G-Y Wang, C-X Zhao, Z Zhu, L Dong, A-M Li, Y-Y Lv, S-H Yao, Y-B Chen, D-D Guan, Y-Y Li, H Zheng, D Qian, C Liu, Y-L Chen, J-F Jia


How to probe the spin contribution to momentum relaxation in topological insulators.

Nature communications 9 (2018) 56-

M-S Nam, BH Williams, Y Chen, S Contera, S Yao, M Lu, Y-F Chen, GA Timco, CA Muryn, REP Winpenny, A Ardavan

Topological insulators exhibit a metallic surface state in which the directions of the carriers' momentum and spin are locked together. This characteristic property, which lies at the heart of proposed applications of topological insulators, protects carriers in the surface state from back-scattering unless the scattering centres are time-reversal symmetry breaking (i.e. magnetic). Here, we introduce a method of probing the effect of magnetic scattering by decorating the surface of topological insulators with molecules, whose magnetic degrees of freedom can be engineered independently of their electrostatic structure. We show that this approach allows us to separate the effects of magnetic and non-magnetic scattering in the perturbative limit. We thereby confirm that the low-temperature conductivity of SmB6 is dominated by a surface state and that the momentum of quasiparticles in this state is particularly sensitive to magnetic scatterers, as expected in a topological insulator.


Folded superstructure and degeneracy-enhanced band gap in the weak-coupling charge density wave system 2H-TaSe2

PHYSICAL REVIEW B 97 (2018) ARTN 115118

YW Li, J Jiang, HF Yang, D Prabhakaran, ZK Liu, LX Yang, YL Chen


Topological surface state of α-Sn on InSb(001) as studied by photoemission

Physical review B: Condensed matter and materials physics American Physical Society 97 (2018) 075101

MR Scholz, L Dudy, F Reis, F Adler, J Aulbach, LJ Collins-McIntyre, LB Duffy, HF Yang, YL Chen, T Hesjedal, ZK Liu, M Hoesch, S Muff, JH Dil, J Schaefer, R Claessen


Observation of the topological surface state in the nonsymmorphic topological insulator KHgSb

PHYSICAL REVIEW B 96 (2017) ARTN 165143

AJ Liang, J Jiang, MX Wang, Y Sun, N Kumar, C Shekhar, C Chen, H Peng, CW Wang, X Xu, HF Yang, ST Cui, GH Hong, Y-Y Xia, S-K Mo, Q Gao, XJ Zhou, LX Yang, C Felser, BH Yan, ZK Liu, YL Chen


Dirac line nodes and effect of spin-orbit coupling in the nonsymmorphic critical semimetals MSiS (M = Hf, Zr)

PHYSICAL REVIEW B 95 (2017) ARTN 125126

C Chen, X Xu, J Jiang, S-C Wu, YP Qi, LX Yang, MX Wang, Y Sun, NBM Schroeter, HF Yang, LM Schoop, YY Lv, J Zhou, YB Chen, SH Yao, MH Lu, YF Chen, C Felser, BH Yan, ZK Liu, YL Chen


Photoemission study of the electronic structure of valence band convergent SnSe

PHYSICAL REVIEW B 96 (2017) ARTN 165118

CW Wang, YYY Xia, Z Tian, J Jiang, BH Li, ST Cui, HF Yang, AJ Liang, XY Zhan, GH Hong, S Liu, C Chen, MX Wang, LX Yang, Z Liu, QX Mi, G Li, JM Xue, ZK Liu, YL Chen


Spectroscopic evidence for the gapless electronic structure in bulk ZrTe5

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 219 (2017) 45-52

L Shen, MX Wang, SC Sun, J Jiang, X Xu, T Zhang, QH Zhang, YY Lv, SH Yao, YB Chen, MH Lu, YF Chen, C Felser, BH Yan, ZK Liu, LX Yang, YL Chen


High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

Nature nanotechnology 12 (2017) 530-534

J Wu, H Yuan, M Meng, C Chen, Y Sun, Z Chen, W Dang, C Tan, Y Liu, J Yin, Y Zhou, S Huang, HQ Xu, Y Cui, HY Hwang, Z Liu, Y Chen, B Yan, H Peng

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ∼0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (∼65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.


Lifshitz Transitions Induced by Temperature and Surface Doping in Type-II Weyl Semimetal Candidate T-d-WTe2

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 11 (2017) ARTN 1700209

Q Zhang, Z Liu, Y Sun, H Yang, J Jiang, S-K Mo, Z Hussain, X Qian, L Fu, S Yao, M Lu, C Felser, B Yan, Y Chen, L Yang


ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 219 (2017) 35-40

Y Zhang, Z Liu, B Zhou, Y Kim, L Yang, H Ryu, C Hwang, Y Chen, Z Hussain, Z-X Shen, S-K Mo


Signature of type-II Weyl semimetal phase in MoTe2.

Nature communications 8 (2017) 13973-

J Jiang, ZK Liu, Y Sun, HF Yang, CR Rajamathi, YP Qi, LX Yang, C Chen, H Peng, C-C Hwang, SZ Sun, S-K Mo, I Vobornik, J Fujii, SSP Parkin, C Felser, BH Yan, YL Chen

Topological Weyl semimetal (TWS), a new state of quantum matter, has sparked enormous research interest recently. Possessing unique Weyl fermions in the bulk and Fermi arcs on the surface, TWSs offer a rare platform for realizing many exotic physical phenomena. TWSs can be classified into type-I that respect Lorentz symmetry and type-II that do not. Here, we directly visualize the electronic structure of MoTe2, a recently proposed type-II TWS. Using angle-resolved photoemission spectroscopy (ARPES), we unravel the unique surface Fermi arcs, in good agreement with our ab initio calculations that have nontrivial topological nature. Our work not only leads to new understandings of the unusual properties discovered in this family of compounds, but also allows for the further exploration of exotic properties and practical applications of type-II TWSs, as well as the interplay between superconductivity (MoTe2 was discovered to be superconducting recently) and their topological order.


Topological origin of the type-II Dirac fermions in PtSe2

PHYSICAL REVIEW MATERIALS 1 (2017) ARTN 074202

Y Li, Y Xia, SA Ekahana, N Kumar, J Jiang, L Yang, C Chen, C Liu, B Yan, C Felser, G Li, Z Liu, Y Chen


Observation of nodal line in non-symmorphic topological semimetal InBi

NEW JOURNAL OF PHYSICS 19 (2017) ARTN 065007

SA Ekahana, S-C Wu, J Jiang, K Okawa, D Prabhakaran, C-C Hwang, S-K Mo, T Sasagawa, C Felser, B Yan, Z Liu, Y Chen


Nontrivial Berry phase and type-II Dirac transport in the layered material PdTe2

PHYSICAL REVIEW B 96 (2017) ARTN 041201

F Fei, X Bo, R Wang, B Wu, J Jiang, D Fu, M Gao, H Zheng, Y Chen, X Wang, H Bu, F Song, X Wan, B Wang, G Wang

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